100 nm AlSb/InAs HEMT for Ultra-Low-Power Consumption, Low-Noise Applications
نویسندگان
چکیده
منابع مشابه
100 nm AlSb/InAs HEMT for Ultra-Low-Power Consumption, Low-Noise Applications
We report on high frequency (HF) and noise performances of AlSb/InAs high electron mobility transistor (HEMT) with 100 nm gate length at room temperature in low-power regime. Extrinsic cut-off frequencies fT/f max of 100/125 GHz together with minimum noise figure NF(min) = 0.5 dB and associated gain G(ass) = 12 dB at 12 GHz have been obtained at drain bias of only 80 mV, corresponding to 4 mW/m...
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ژورنال
عنوان ژورنال: The Scientific World Journal
سال: 2014
ISSN: 2356-6140,1537-744X
DOI: 10.1155/2014/136340